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锗粉

    级别和纯度:
  • PrimorTrace™
  • ≥99.999% metals basis
  • powder,≥200 mesh
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货号 (SKU) 包装规格 是否现货 价格 数量
C105173-5g
5g 现货 Stock Image
C105173-10g
10g 现货 Stock Image
C105173-50g
50g 现货 Stock Image
C105173-100g
100g 现货 Stock Image
C105173-250g
250g 现货 Stock Image
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金属单质 (24)

基本描述

别名 锗 | 单质锗
英文别名 Elemental germanium
规格或纯度 PrimorTrace™, ≥99.999% metals basis, powder,≥200 mesh
英文名称 Germanium
运输条件 常规运输
产品介绍

室温下在空气中较稳定,在高温下能被氧化。粉状锗可在氯或溴中燃烧。不溶于水和盐酸及稀硫酸。能溶于浓硝酸、浓硫酸或王水。不溶于稀苛性碱溶液;可溶于熔融的苛性碱、硝酸盐或碳酸盐,生成锗酸盐。能跟硫化合生成硫化锗。 高纯度锗是半导体材料,掺有微量特定杂质的锗单晶可用于制各种晶体管、整流器及其他器件,作为温差电池材料用于制太阳能电池、光电池,用于制热敏电阻、薄膜电阻、半导体温度计、专门透过红外线的锗窗、棱镜或透镜等。锗的化合物用于制荧光板及各种高折光率玻璃。

应用:

该产品可以用作形成具有优异的可调光致发光和光催化活性的高度多孔ZrO2:Tb3+纳米磷光体的前体之一。


纯度 ≥99.999% metals basis

名称和识别符

EC号 231-164-3
分子类型 小分子
Isomeric SMILES [Ge]
分子量 72.64

化学和物理性质

密度 5.35
敏感性 对湿度敏感
沸点 2830°C
熔点 937.4°C

安全和危险性(GHS)

象形图 GHS02,   GHS08,   GHS09
信号词 危险
危险声明

H228: 易燃固体

H361: 怀疑破坏生育力或未出生的孩子

H373: 通过长时间或反复暴露对器官造成损害

H400: 对水生生物有剧毒

H411: 对水生生物有毒并具有长期持续影响

预防措施声明

P201: 使用前获取特殊说明

P210: 远离热源,热表面,火花,明火和其他点火源。 - 禁止抽烟。

P202: 在阅读并理解所有安全预防措施之前,不要进行操作。

P240: 地面/粘结容器和接收设备

P241: 使用防爆的[电气/通风/照明/.../]设备。

P260: 不要吸入灰尘/烟雾/气体/雾/蒸汽/喷雾。

P273: 避免释放到环境中。

P280: 戴防护手套/穿防护服/戴防护眼罩/戴防护面具。

P391: 收集溢出物

P308+P313: 如接触到或有疑虑:求医/就诊。

P370+P378: 火灾时:使用干砂、干粉或抗醇泡沫灭火。

P405: 密闭存放

P501: 将内容物/容器处理到。。。

WGK Germany 3
RTECS LY5200000
个人防护装备 Eyeshields,full-face particle respirator type N100 (US),Gloves,respirator cartridge type N100 (US),type P1 (EN143) respirator filter,type P3 (EN 143) respirator cartridges

质检证书(CoA,COO,BSE/TSE 和分析图谱)

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批号(Lot Number) 证书类型 货号
D2501184 分析证书 C105173
D2501185 分析证书 C105173
D2501186 分析证书 C105173
D2501187 分析证书 C105173
D2501188 分析证书 C105173
G2415232 分析证书 C105173
G2415229 分析证书 C105173
G2415230 分析证书 C105173
G2415231 分析证书 C105173
L2301034 分析证书 C105173
L2301031 分析证书 C105173
L2301032 分析证书 C105173
L2301033 分析证书 C105173
C2311281 分析证书 C105173
D2311257 分析证书 C105173
D2311258 分析证书 C105173
D2311271 分析证书 C105173
B2324225 分析证书 C105173
B2324229 分析证书 C105173
B2324234 分析证书 C105173
C2418058 分析证书 C105173
F2218211 分析证书 C105173
F2218212 分析证书 C105173
F2218236 分析证书 C105173
F2218242 分析证书 C105173

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技术文档和文章

低阈值电流密度单片生长在Si衬底上的连续波InAs/GaAs量子点激光二极管
Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities
半导体材料带隙知多少?
Semiconductor material band gap know how much?
半导体材料:常见问题汇总
Semiconductor Materials: A Summary of Questions
Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities
Semiconductor material band gap know how much?
Semiconductor Materials: A Summary of Questions
Semiconductor material band gap know how much?
Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities
Semiconductor material band gap know how much?
Semiconductor Materials: A Summary of Questions
Semiconductor material band gap know how much?

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此产品的引用文献

引用文献

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27. Enzo Rotunno,Laura Lazzarini,Massimo Longo,Vincenzo Grillo.  (2013-01-17)  Crystal structure assessment of Ge-Sb-Te phase change nanowires..  Nanoscale,  ((4)): (1557-1563).  [PMID:23322217]
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