Radiation hardened MOSFETs realized by Al2O3 induced Bi-GdF3 with trapped interfacial electrons located in Ti3C2Tx framework

The radiation resistance of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is of great significance when applied in aerospace. However, it is still challenging to obtain MOSFETs with excellent radiation resistance. In this work, the radiation hardened MOSFETs were realized by GdF 3 -Al 2 O 3 @Bi-Ti 3 C 2 T x /epoxy (MBAG/EP) polymer-based composite coating with function of trapped interfacial electrons. The radiation resistance of resultant packed MOSFET is significantly improved, showing the lower threshold voltage negative drift value (0.41 V) than the bare MOSFET (7.89 V). This is mainly attributed to the introduction of ultra-thin Al 2 O 3 intermediate layer between Bi and GdF 3 , which effectively tailor electron dense and distribution for an effective electron attenuation, and thus improve the radiation resistance of the MOSFET. Theoretical calculations further reveal that the packed MOSFETs present the less shifted voltage and trapped charges compared with the pristine one. This work provides an interface engineering strategy for developing radiation hardened MOSFETs.