Ni-modified BaTiO3 film prepared by sol-gel with high energy storage performance

The development of lead-free dielectric capacitors with high recoverable energy storage density and high energy storage efficiency is important for improving the overall performance of electronic and power systems. BaTiO 3 (BTO) is one of the most common ferroelectric materials and has attracted much attention for energy storage applications in the past decades due to its excellent dielectric and ferroelectric properties. However, high remnant polarization and low electrical breakdown strength of BTO limit its development in energy storage applications. Many efforts (e.g., elements doping, interface/heterostructure, etc.) have been made to improve the energy storage density of BTO thin films. In this paper, Ba 1-x Ni x TiO 3 thin films (x = 0, 0.02, 0.04, 0.06, 0.08; abbreviated as BN x T) were synthesized via sol-gel and spin-coated method. The effect of Ni doping on the structural, dielectric, ferroelectric and energy storage properties of BTO thin films has been studied. The results confirmed that with the increase of Ni doping, a second phase arises and the dielectric constant decreases. While appropriate Ni doping led to the improvement of the breakdown strength, further increase of Ni deteriorated the energy storage because of the high oxygen vacancy. Finally, optimized energy storage performance was obtained for BN 0.04 T thin film: dielectric constant of 401, dielectric loss of 0.002, recoverable energy density of 20.2 J/cm 3 and energy storage efficiency of 83.6% at 965 kV/cm. Meanwhile, the remnant and maximum polarization of the films were 0.06 μC/cm 2 and 50 μC/cm 2 , respectively. BN 0.04 T thin film has an excellent application prospect and is expected to appear as a component in the future composite energy storage film system.