Magnesium ions enhanced core-shell lattice matching for Narrow-Band green emission indium phosphide QDs

Indium phosphide QDs have emerged as a promising candidate for the next generation optoelectronic applications. However, the optical performance of InP QDs still lags behind that of CdSe-based QDs, partly due to surface traps induced by the lattice mismatch between InP and ZnSe. Herein, based on (DMA) 3 P, we designed an alloyed inner-shell structure of InP/Zn(Mg)Se/ZnS QDs. The dual-function mechanism of the Zn(Mg)Se was revealed, which effectively mitigates the lattice mismatch between the core and shell to   reduce the emission of surface defect states, resulting in narrowed emission peaks (FWHM ∼ 36 nm). While the increased band gap of Zn(Mg)Se confines the exciton delocalization from core to shell, thereby reducing the non-radiative relaxation of carriers at the defect states in the shell. This discovery provides a strategy to improve the color purity and luminescence efficiency of InP QDs. By combining blue LED chips with InP/Zn(Mg)Se/ZnS, a white light-emitting diode (QLED) with a high luminous efficiency of 63 lm/W was obtained. Furthermore, the realization of QDs arrays with 10 μm pixel dots by inkjet printing technology and the fabrication of white-light emitting Micro-LEDs by combining QDs films with Micro-LED chip arrays demonstrate the potential application of InP QDs in high-efficiency optoelectronic devices (LEDs/micro-LEDs).