In-situ synthesis of FeSi/SiC as a microwave absorbing material with high temperature structural stability

The rapid development of radar technology has raised new challenges to the survivability and penetration ability of weapons. The capacity for stealth of weapons and equipment in high-temperature operation is crucial to contemporary warfare. Consequently, the design and development of absorbing materials with high-temperature resistant, broadband, and highly efficient multicomponent dielectric composite electromagnetic wave (EMW) have become a significant priority. In this study, a high-temperature resistant FeSi/SiC composite is synthesized via an in-situ one-step loading process, whereby FeSi is impregnated and reduced onto SiC. The FeSi/SiC exhibits a minimum reflection loss (RL) of −57.10 dB at 5.68 GHz with a thickness of 3.0 mm. Additionally, the effective absorption bandwidth (EAB, RL ≤ −10 dB) is 4.34 GHz (13.66–18 GHz) at a thickness of only 1.2 mm. It is noteworthy that the composite also demonstrated remarkable stability and wave-absorbing properties at an elevated temperature of 873 K. In conclusion, the developed fabrication strategy for high temperature resistant microwave absorbing materials (MAMs) is expected to facilitate the design of high-performance electromagnetic wave absorbing devices.