Enhanced radiation resistance of MOSFET devices based on Cs4PbBr6@ZnO heterojunctions with high local electron density and increased extranuclear electron binding energy

The metal-oxide-semiconductor field-effect transistor (MOSFET) devices as electronically controlled switches suffer performance degradation or even damage under high-energy electron radiation. Therefore, it is urgent to develop novel packaging hardening coatings to mitigate the risk of high-energy electron radiation exposure for MOSFET devices. Here, Cs 4 PbBr 6 @ZnO heterojunction is prepared by atomic layer deposition technology, and the polymer-based composite coatings (Cs 4 PbBr 6 @ZnO/EP) are constructed on the surface of MOSFET devices, showing the excellent radiation resistance. The threshold voltage offset under high-energy electron radiation is reduced from 2.26 V to 0.49 V. Experimental and theoretical calculation results reveal that Cs 4 PbBr 6 @ZnO functional fillers play a crucial role in the blocking of high-energy electron radiation. Meanwhile, Cs 4 PbBr 6 @ZnO heterojunction is beneficial to the interfacial electron transfer, forming an electron accumulation region with high local electron density and an electron depletion region with increased extranuclear electron binding energy, which reduces the trapping charge concentration and improves the radiation resistance of MOSFET devices. This work provides a novel strategy for the design and development of anti-radiation hardening MOSFET devices.