Boosting tribo-photovoltaic effect in perovskite triboelectric nanogenerators by regulating built-in potential through p-n junctions

CsPbBr 3 perovskite has become a star material for triboelectric nanogenerators (TENGs) due to its excellent optoelectronic properties, dielectric properties and stability in the atmosphere. However, regulating its optoelectronic and dielectric properties through charge-directed transport and separation within TENGs has not been comprehensively explored. Herein, p-n junction is constructed to form built-in potential ( E built-in ) for charge-directed transport by introducing a semiconductor layer beneath the perovskite film in perovskite-TENGs, where the effect of E built-in ’s direction and intensity on output performance is systematically investigated. Introducing the p-type semiconductor NiO x creates a reversed E built-in , which enhances the surface triboelectric charge density of the perovskite and achieves improved triboelectric output performance of 205 V and 43 μA cm −2 for the PVDF-CsPbBr 3 TENG. Conversely, the n-type semiconductor SnO 2 establishes a parallel E built-in , greatly facilitating the extraction and separation of photogenerated carriers, leading to a high current density of 1.4 mA cm −2 under illumination based on the triboelectric-photoelectric coupling effect. Moreover, the CsPbBr 3 -TENGs demonstrate superior stability and a broad linear response range and fast photoresponsivity, proving their potential for practical applications in various self-powered optoelectronic detection devices.