Bipolar resistive switching behavior of PVA/g-C3N4 quantum dots hybrid thin films

Graphite-phase carbon nitride quantum dots (g-C 3 N 4 QDs) have garnered widespread attention and considerable research interest as active media for resistive random-access memory (RRAM) devices owing to their exceptional physical properties. In this study, g-C 3 N 4 QDs were synthesized via ultrasonic-assisted liquid-phase exfoliation. Subsequently, the obtained g-C 3 N 4 QDs with uniform size were embedded into polyvinyl alcohol (PVA) for preparing PVA/g-C 3 N 4 QDs hybrid, and the RRAM devices with Al/g-C 3 N 4 QDs-PVA/ITO/PET structure were fabricated. The obtained memory devices exhibit bipolar resistive switching (BRS) behavior and are primarily influenced by the space charge limited conduction (SCLC) mechanism. The data retention time exceeds 10 4 s at a read voltage of 0.1 V, accompanied by an impressively low set voltage. In addition, the device exhibits a surprising temperature dependence of the resistive switching performance at different temperatures. The aforementioned properties demonstrate the significant potential of g-C 3 N 4 QDs in RRAM for data storage applications.