Achieving high blue light excited quantum efficiency in CsPbBr3 quantum dots through SiO2-modified glass network structure for wide color gamut displays

In situ precipitation of CsPbBr 3 quantum dots within glass (CsPbBr 3 QDs@galss) is considered as one of the effective methods to overcome their instability and achieve practical applications. However, challenges such as low photoluminescence quantum yield (PLQY), poor thermostability and photostability still persist. Herein, we modulated the rigidity of the glass network structure by adjusting the SiO 2 content in the phosphate glass matrix. This strategy allowed us to successfully fabricate CsPbBr 3 QDs@glass composites with excellent crystallinity and luminescence properties. This composite exhibits a narrow-band emission at 515 nm with a remarkable PLQY up to 72 % under 455 nm excitation, 1.7 times higher than that of unintroduced SiO 2 . Moreover, it retains approximately 30 % of its initial luminescence intensity even at a high temperature of 373 K. Meanwhile, the fabricated green LED maintains its luminescence intensity at about 93 % of the initial value after 120 h of continuous operation. To demonstrate its conceptual application, an LCD screen was also assembled using a white LED lighting strip based on CsPbBr 3 QDs@glass that shows outstanding color reproduction and color saturation.