Bromine Vacancy Redistribution and Metallic-Ion-Migration-Induced Air-Stable Resistive Switching Behavior in All-Inorganic Perovskite CsPbBr3 Film-Based Memory Device
Advanced Electronic Materials [2019]
Yuanyuan Zhu, Pengwei Cheng, Jing Shi, Hongjun Wang, Yong Liu, Rui Xiong, Hongyu Ma, Hongxiang Ma
