Anti-thermal quenching of Eu3+ luminescence in negative thermal expansion Zr(WO4)2

Thermal quenching of luminescence is the most critical problem for rare earth doped phosphors used in light-emitting diodes (LEDs). Herein, we demonstrate that thermal quenching can be considerably suppressed via the negative thermal expansion effect in Zr(WO 4 ) 2 that serves as host for Eu 3+ red emission. The photoluminescence (PL) intensity is surprisingly enhanced by 130% when the temperature is raised from room temperature to 100 °C. As temperature further increases to 160 °C, the PL intensity turns to reduce, which is still 1.4 times of that at room-temperature. Moreover, Zr(WO 4 ) 2 :15%Eu phosphor has good durability, which still exhibits strong red luminescence (only 13% loss) after being kept in 85 °C/85% relative humidity chamber for 240 h. The anti-thermal quenching of Eu 3+ luminescence can be ascribed mainly to the following two factors: first one is the thermal-enhanced energy transfer between Eu 3+ ions induced by the contraction of Zr(WO 4 ) 2 unit-cell volume that leads to the strong structural rigidity of host lattice; second one would be electron traps in the host that favors the increase of electrons on the excited energy levels. This important anti-thermal quenching effect induced from the negative thermal expansion of the host matrix may stimulates a novel and efficient approach to design highly thermal stable phosphors for next-generation LEDs.