Dense ternary-size particles interstitial filling gradation stacking model for preparing high-quality indium tin oxide targets

A novel ternary-size particles interstitial filling gradation stacking model has been proposed and discussed systematically for preparing dense indium tin oxide (ITO) targets with high density and low resistivity. In this stacking model, three particle sizes satisfy a ratio of 1 : 2 -1 : 6 2 - 1 $\text{1 :}\sqrt{\text{2}}\text{-1 :}\frac{\sqrt{\text{6}}}{\text{2}}\text{-}\text{1}$ . Significantly, the target sintered at 1550 ℃ for 10 h shows maximum relative density of 99.67% and minimum resistivity of 0.79 × 10 -4 Ω·cm. Moreover, two new binary-size particles interstitial filling stacking models are proposed and discussed. In binary-size particles models, designed particle sizes satisfy the formulas of d  =  ( 6 2 - 1 ) × D $(\frac{\sqrt{6}}{2}-1)\times D$ and d = ( 2 - 1 ) × D $=(\sqrt{2}-1)\times D$ , respectively. These excellent properties are caused by the compact structure. The small particles are filled in the internal gaps between larger particles. 64&118&285 nm ternary-size particles model obviously increases density and decreases resistivity of target. This novel strategy contributes to preparing high-performance target, promoting the development of next generation ITO functional materials.