Multivariant Me ions design of Bi(Ni0.5Zr0.5)O3 amorphous thin film with high energy storage capability

The development of advanced pulse power technology proposes higher demand for dielectric energy storage materials . However, simultaneously obtaining high polarization and breakdown strength has become an obstacle to the development of dielectric materials. Herein, through the elaborate design of multivariant ions Me, BiMeO 3 system thin film Bi(Ni 0.5 Zr 0.5 )O 3 integrating high polarization, large breakdown strength and a localized heterostructure , generating an excellent energy storage density of 77.42 J cm −3 and efficiency of 70.29% at 5.60 MV cm −1 . The enhancive breakdown strength of Bi(Ni 0.5 Zr 0.5 )O 3 thin film is mainly attributed to the amorphous phase induced by low preparation temperature and the oxygen vacancy bound by the valence change of Ni 2+ ion, which reduces leakage current density. This design approach is expected to be widespread for the development of BiMeO 3 system thin film.