Effective growth strategy of colloidal quantum dots with low defects and high brightness

Quantum dots (QDs) with an alloy shell (CdSe@ZnS/ZnS) are one of the most promising emitters for optoelectronic devices for their superior properties such as narrow full width at half maximum (FWHM), high color purity and tunable wavelength. However, the presence of lattice stresses during the internal growth of quantum dots can cause severe exciton bursts. Optimizing the ramp-up process during the core growth of quantum dots and rising the temperature when cladding with ZnS shells is an effective strategy for obtaining high-quality quantum dots. Besides, the stability of quantum dots is further modified by using 1-Octanethiol (OT) as ligands. Detailed analyses of the morphology, colloidal stability, and luminescence performance of QDs were represented. Finally, green CdSe@ZnS/ZnS QLEDs with prolonged carrier lifetimes and less defect state densities achieved peak luminescence at 361850 cd/m 2 with a current efficiency (CE) of 33 cd/A. This work provides a better understanding of the relationship between defect state density and the performance of quantum dots for designing and fabricating high-performance light-emitting diodes.